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The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004.
INCH-POUND MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002
PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE This specification is approved for use by all Departments and Agencies of the Department of Defense. * 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die. 1.3 Maximum ratings. Unless otherwise specified, TC = +25C and ratings apply to all case outlines. Col. 1 Type Col. 2 V(BR) Col. 3 VRWM and V(BR)min Col. 4 IO1 TL = +55C; L = .375 inch (1) (2) (3) A dc 5 5 5 5 5 Col. 5 IFSM IO = 2 A dc tp = 1/120 s TA = +55C A(pk) 100 100 100 100 100 Col. 6 TJ Col. 7 IO2 TA = +55C (2) (4) A dc 3 3 3 3 3 Col. 8 TSTG The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500.
V dc 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US 200 400 600 800 1,000 200 400 600 800 1,000
C -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200
C -65 to +175 -65 to +175 -65 to +175 -65 to +175 -65 to +175
(1) Derate linearly at 41.6 mA/C above TL = +55C at L = .375 inch (9.53 mm). (2) An IO of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the maximum junction temperature at or below +200C as proven by the junction temperature rise test (see 6.5). Barometric pressure reduced: 1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet). 1N5553, 1N5554 - 33 mmHg (70,000 feet). (3) Does not apply to surface mount devices. (4) Derate linearly at 25 mA/C above TA = +55C. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to Semiconduction@dscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http://www.dodssp.daps.mil. AMSC N/A FSC 5961
MIL-PRF-19500/420H
1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25C. IR2 at TA = +100C Type Vf at If = 9.0 A(pk) 1 percent duty cycle, 8.3 ms max pulse width Min V(pk) 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US 0.6 0.6 0.6 0.6 0.6 Max V(pk) 1.2 1.2 1.2 1.3 1.3 IR1 RJL RJEC
A dc (max) at VR (V dc) 1.0 1.0 1.0 1.0 1.0 200 400 600 800 1,000
A dc (max) at VR (V dc) 75 75 75 75 75 200 400 600 800 1,000
See (1)
(1) RJL 22C/W for L = .375 inch (9.52 mm). RJEC 11C/W for L = 0 (US version). 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 * Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.dap.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/420H
Dimensions Ltr Inches Min BL BD LD LL LU .130 .115 .037 .900 Max .300 .180 .042 1.300 .050 Millimeters Min 3.30 2.92 0.94 22.86 Max 7.62 4.57 1.07 33.02 1.27 3 3, 4 Notes
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions BL and BD include all components of the diode periphery except the sections of leads over which the diameter is controlled. 4. Dimension BD shall be measured at the largest diameter. 5. Dimension LU shall include the sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions of diode 1N5550 through 1N5554, (similar to DO-41).
3
MIL-PRF-19500/420H
Dimensions Ltr Inches Min BL BD ECT S .200 .137 .019 .003 Max .275 .180 .034 Millimeters Min 5.08 3.48 0.48 0.08 Max 6.99 4.57 0.86
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions of 1N5550US through 1N5554US.
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MIL-PRF-19500/420H
Ltr
Dimensions Inches Min Max .091 .078 .014 Millimeters Min 2.16 1.83 0.20 Max 2.31 1.98 0.36
A B C
.085 .072 .008
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics are: Top (cathode) Au Thickness = 10,000A minimum, Back (anode) Au Thickness = 4,000A minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. JANHCA and JANKCA (A-version) die dimensions.
5
MIL-PRF-19500/420H
Ltr
Dimensions Inches Min Max .092 .077 .035 Millimeters Min 2.24 1.78 0.18 Max 2.34 1.96 0.89
A B C
.088 .070 .007
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics are Top (cathode) Au Thickness = 10,000A minimum, Back (anode) Au Thickness = 4,000A minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
* FIGURE 4. JANHCB (B-version) die dimensions.
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MIL-PRF-19500/420H
Ltr
Dimensions Inches Min Max .065 .058 .014 Millimeters Min 1.52 1.32 0.20 Max 1.65 1.47 0.36
A B C
.060 .052 .008
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics are Top (cathode) Au Thickness = 10,000A minimum, Back (anode) Au Thickness = 4,000A minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 5. JANHCC (C-version) die dimensions.
7
MIL-PRF-19500/420H
Ltr A B C Min .081 .055 .007
Inches Max .087 .061 .012
Millimeters Min Max 2.05 2.20 1.40 1.55 0.18 0.30
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics are Top (anode) Al Thickness = 60,000A minimum. Back (cathode) Au Thickness = 2,500A minimum, 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
* FIGURE 6. JANHCD and JANKCD (D-version) die dimensions.
8
MIL-PRF-19500/420H
Ltr A B C Min .081 .055 .007
Inches Max .087 .061 .012
Millimeters Min Max 2.05 2.20 1.40 1.55 0.18 0.30
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics are Top (anode) Al Thickness = 60,000A minimum. Back (cathode) Al/Ti/Ni/Ag Thickness = 2,500A minimum, 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
* FIGURE 7. JANHCE and JANKCE (E-version) die dimensions.
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MIL-PRF-19500/420H 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows:. * EC .........................End cap.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US through 1N5554US, and figures 3, 4, 5, 6, and 7 (JANHC and JANKC). 3.4.1 Lead finish. Unless otherwise specified, lead or end cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish the maximum lead temperature is limited to 175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond shall be in accordance with the requirements of category I in MIL-PRF-19500. US version devices shall be structurally identical to the non-surface mount devices except for lead terminations. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial container. 3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. No color coding will be permitted. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. b. c. Qualification inspection (see 4.2). Screening (see 4.3). Conformance inspection (see 4.4).
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MIL-PRF-19500/420H 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall be performed on the first inspection lot to this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as specified herein. * 4.3 Screening (JANS, , JANTXV and JANTX levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 (appendix E), and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 1a 1b 2 3a 3b (1) 3c 4 5 6 7a 7b 8 9 10 11 12 (2) 13
JANS level Required Required Optional Required Not applicable Thermal impedance (see 4.3.1 and 4.4.1) Not applicable Not applicable Not applicable Not applicable Optional Required VF1 and IR1 Method 1038 of MIL-STD-750, condition A VF1 and IR1; Vf1 0.1 V dc IR1 250 nA dc or 100 percent of initial value whichever is greater. Required, see 4.3.2 Subgroups 2 and 3 of table I herein; IR1 100 percent of initial reading or 250 nA dc, whichever is greater. VF1 .1 V dc change from initial value. Scope display evaluation (see 4.5.3)
JANTXV and JANTX level Not required Required (JANTXV only) Not required Required Not applicable Thermal impedance (see 4.3.1 and 4.4.1) Not applicable Not applicable Not applicable Not applicable Optional Not required Not applicable Method 1038 of MIL-STD-750, condition A VF1 and IR1
Required, see 4.3.2 Subgroup 2 of table I herein; IR1 100 percent of initial reading or 250 nA dc, whichever is greater. VF1 .1 V dc change from initial value. Scope display evaluation (see 4.5.3) 14a Not applicable Not applicable (3) 14b Required Required 15 Required Not required 16 Required Not required (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) ZJX is not required in screen 13, if already previously performed. (3) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after
temperature cycling.
11
MIL-PRF-19500/420H * 4.3.1 Thermal impedance ZJX measurements for screening. The ZJX measurements shall be performed in accordance with method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using statistical methods and it shall not exceed the table I, subgroup 2 herein. See 4.4.1 for test conditions. 4.3.1.1 Thermal impedance (ZJX measurements) for initial qualification or requalification. The ZJX measurements shall be performed in accordance with method 3101 of MIL-STD-750 (read and record date ZJX). ZJX shall be supplied on one lot (500 pieces minimum and a thermal response curve shall be submitted.) Twentytwo of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of parts. Measurements conditions shall be in accordance with 4.4.1. * 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2, 4.5.2.1) adjust IO to achieve the required TJ. 4.3.3 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. * 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. The following test conditions shall be used for ZJX, table I: ZJX 1.5C/W. a. b. c. d. e. IM ............................. 1 mA to 10 mA. IH.............................. 5 A minimum. tH.............................. 10 ms. tMD ........................... 100 s maximum. tSW ........................... 5 s maximum.
12
MIL-PRF-19500/420H * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) requirements shall be in accordance with the applicable inspections of table I, subgroup 2 herein. For delta requirements see table III herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall be at the test conditions of the original sample. Subgroup B3 B3 B3 Method 1056 1051 4066 Condition 0C to +100C, 25 cycles. -55C to +175C, 100 cycles. IFSM = rated IFSM (see col. 5 of 1.3); 10 surges of 8.3 ms each at 1 minute intervals, superimposed on IO = 0, VRWM = 0. B4 1037 IO = IO2 rated minimum (see col. 4 of 1.3) VR = rated VRWM (see col. 3 of 1.3 and 4.5.5); 2,000 cycles. IO = IO2 rated minimum (see col. 4 of 1.3); apply VR = rated VRWM (see col. 3 of 1.3 and 4.5.2) adjust IO to achieve TJ minimum; f = 50-60 Hz. Option 1: TA = + 30C max. ; TJ = 225C minimum; t = 216 hours; n = 45 c = 0. or Option 2: TA = + 100C max. ; TJ = 275C minimum; t = 96 hours, n = 22, c = 0. RJL (maximum) 22C/W; L = .375 inch (9.53 mm). For surface mount devices (US version), RJEC 11C/W. Peak reverse power, see 4.5.5. PRM 1,000 W. Test shall be performed on each sublot; sampling plan n = 10, c = 0, electrical end-points, see table I, subgroup 2 herein.
B5
1027
*
B6
3101 or 4081
B7
* 4.4.2.2 Group B inspection, table VIb (JAN, , JANTX and JANTXV of MIL-PRF-19500). Subgroup B2 * B2 B3 Method 1056 1051 1027 Condition 0C to +100C, 10 cycles. -55C to +175C, 25 cycles. TJ = 150C minimum (see 4.5.2.1). Adjust IO to achieve the required TJ; apply VR = rated VRWM (see col. 3 of 1.3), f = 50-60 Hz (see 4.5.2). B5 Not applicable .
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable.
13
MIL-PRF-19500/420H * 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup C2 C2 C2 Method 1056 1051 2036 Condition 0C to +100C, 10 cycles. -55C to +175C, 25 cycles. Tension: Test condition A; weight = 5 pounds; t = 30 seconds. Lead fatigue: Test condition E; weight 2 pounds. NOTE: Both tension and lead fatigue are not applicable for US devices. * C5 3101 or 4081 1027 See 4.5.5.
C6
TJ = 150C minimum (see 4.5.2.1). IO = IO2 = 3 A dc minimum; adjust IO to achieve the required TJ; apply VR = rated VRWM (see col. 3 of 1.3), f = 50-60 Hz (see 4.5.2.1).
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) shall be in accordance with table I, subgroup 2 herein. See table III for delta limits when applicable. 4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor less than 150 degrees. * 4.5.2.1 Free air burn-in. Deliberate heat sinking, baffles to create an oven, forced air-cooling or heating is prohibited unless otherwise approved by the qualifying activity. The use of a current limiting or ballast resistor is permitted provided that each DUT still sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is maintained through out the burn-in period. TJ = 135C minimum for screening and TJ = 150C for 4.4.2 and 4.4.3 life tests. Use method 3100 of MIL-STD-750 to measure TJ. 4.5.3 Scope display evaluation. Scope display evaluation shall be sharp and stable in accordance with method 4023 of MIL-STD-750. Scope display may be performed on ATE (automatic test equipment) for screening only, with the approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a scope. The reverse current (IBR) over the knee shall be 500 A peak.
14
MIL-PRF-19500/420H 4.5.4 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3101 or 4081 of MIL-STD-750. Read and record data in accordance with group E herein and shall be included in the qualification report. Forced moving air or draft shall not be permitted across the devices during test. The maximum limit under these test condition shall be RJL 22C/W for L = .375 (9.53 mm); RJEC 11C/W for L= 0 (US version). The following conditions shall apply: a. IH b. tH c. IM d. tMD ............................. 2 A minimum. ............................. Thermal equilibrium. ............................. 1.0 mA to 10 mA. ............................. 100 s maximum.
The device shall be allowed to reach equilibrium at current IH before the measurement shall be made (tH 25 sec). LS = Lead spacing = .375 inch (9.53 mm) minimum for leaded devices and LS = 0 minimum for unleaded devices as defined (see figure 8):
FIGURE 8. Mounting arrangement. 4.5.5 Peak reverse power test. A 20 microsecond half-sine waveform of current shall be used and peak reverse power shall be determined by the product of peak reverse voltage and peak reverse current. A 20 microsecond square waveform may also be used with the approval of the qualifying activity (see figure 9).
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MIL-PRF-19500/420H * TABLE I. Group A inspection.
Inspection 1/ Method Subgroup 1 Visual and mechanical inspection Subgroup 2 Thermal impedance Forward voltage 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US Forward voltage Reverse current leakage 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US Breakdown voltage (diodes) 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US See footnote at end of table. 4021 4011 4016 3101 4011 2071
MIL-STD-750 Conditions
Symbol Min
Limits Max
Unit
See 4.3.1 and 4.4.1. IF = 9.0 A(pk); duty cycle 2 percent (pulsed see 4.5.1); tp 8.3 ms
ZJX VF1 0.6 0.6 0.6 0.6 0.6 VF1 IR1 0.5
1.5
C/W
1.2 1.2 1.2 1.3 1.3 1.0
V(pk) V(pk) V(pk) V(pk) V(pk) V dc
IF = 1.5 A dc DC method VR = 200 V dc VR = 400 V dc VR = 600 V dc VR = 800 V dc VR = 1,000 V dc
1.0 1.0 1.0 1.0 1.0 VBR1
A dc A dc A dc A dc A dc
IR = 50 A dc IR = 50 A dc IR = 50 A dc IR = 50 A dc IR = 50 A dc
200 400 600 800 1,000
V dc V dc V dc V dc V dc
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MIL-PRF-19500/420H TABLE I. Group A inspection - Continued.
Inspection 1/ Method Subgroup 3 High temperature operation: Reverse current leakage Reverse current leakage 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US Forward voltage 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US Low temperature operation: Forward voltage 4011 4011 4016
MIL-STD-750 Conditions
Symbol Min
Limits Max
Unit
TA = +100C
DC method DC method VR = 200 V dc VR = 400 V dc VR = 600 V dc VR = 800 V dc VR = 1,000 V dc IF = 9.0 A(pk); duty cycle 2 percent (pulsed see 4.5.1); tp 8.3 ms
IR2
75 75 75 75 75 VF2 1.2 1.2 1.2 1.3 1.3
A dc A dc A dc A dc A dc
V(pk) V(pk) V(pk) V(pk) V(pk)
TA = -55C IF = 9.0 A(pk); duty cycle 2 percent (pulsed); tp 8.3 ms IF = 1.5 A dc
VF3 VF4 VBR2
1.5
V(pk)
Forward voltage Breakdown voltage (diodes) 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US Subgroup 4 Reverse recovery time Scope display evaluation See footnote at end of table.
4011 4021
0.5
1.2
V dc
IR = 50 A dc IR = 50 A dc IR = 50 A dc IR = 50 A dc IR = 50 A dc
200 400 600 800 1,000
V dc V dc V dc V dc V dc
4031 4023
Condition B1 See 4.5.3, n = 116, c = 0
trr
2.0
s
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MIL-PRF-19500/420H TABLE I. Group A inspection - Continued.
Inspection 1/ Method Subgroups 5 Not applicable Subgroup 6 Forward surge 4066
MIL-STD-750 Conditions
Symbol Min
Limits Max
Unit
IFSM = rated (see col. 6 of 1.3); 10 surges of 8.3 ms each at 1 minute intervals, superimposed on IO = 0, VRSM = 0 See table I, subgroup 2.
Electrical measurement Subgroup 7 Not applicable
1/ For sampling plan, see MIL-PRF-19500.
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MIL-PRF-19500/420H * TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
MIL-STD-750
Sampling plan
Method Subgroup 1 Thermal shock 1056
Conditions 45 devices c=0 20 cycles, condition D except low temperature shall be achieved using liquid nitrogen (-195C). Perform a visual for cracked glass. 500 cycles, condition C, -65C to +175C. See table I, subgroup 2 herein. 22 devices c=0
Temperature cycling Electrical measurements Subgroup 2
Steady state dc blocking life
1051
1048
1,000 hours, condition A; VR = VRWM See table I, subgroup 2 and table III herein. 3 devices c=0
Electrical measurements * Subgroup 3 DPA (Decap analysis) * Subgroup 4 Thermal impedance curves 2101
Cross section and scribe and break. Separate samples shall be used for each test.
Each supplier shall submit their (typical) maximum design thermal impedance curves. In addition, optional test conditions and ZJX limit shall be provided to the qualifying activity in the qualification report. See figures 10, 11, and 12; TJ 120C; L = .375 inch; TL = 55C; IO = 5 A dc. 22 devices c=0 1001 Pressure (see 1.3); t = 1 min. DC method; VR = VRWM (see 1.3); IR1 = 1.0 A dc maximum
Junction temperature rise (see 4.5.2.1) Subgroup 5 Barometric pressure, reduced (altitude operation) Electrical measurement * Subgroup 6 ESD
See footnotes at end of table.
See table I, subgroup 2 and table III herein. n = 3, c = 0 1020
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MIL-PRF-19500/420H * TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.
Inspection
MIL-STD-750
Sampling plan
Method * Subgroup 8 Peak reverse power
Conditions
See 4.5.5 herein. Peak reverse power (PRM)= shall be characterized by the supplier and this data shall be available to the Government. Test shall be performed on each sublot. During the PRM test, the voltage (VBR) shall be monitored to verify it has not collapsed. Any collapse in VBR during or after the PRM test or rise in leakage current (IR) after the test that exceeds IR1 in table I shall be considered a failure to that level of applied PRM. Progressively higher levels of PRM shall be applied until failure occurs on all devices within the chosen sample size to characterize each sublot. n = 45 1057 Step stress to destruction by increasing cycles or up to a maximum of 25 cycles. 22 devices c=0 4066 IFSM = 80 A(pk); 10 surges of 8.3 ms each at 1 minute intervals, superimposed on IO = 2 A dc; VRWM = rated VRWM (see col. 3 of 1.3). TA = +100C. See table I, subgroup 2 and table III herein.
Electrical measurement
Subgroup 9 1/ Resistance to glass cracking * Subgroup 10 Forward surge
Electrical measurement
1/ The sample size for this step stress requirement shall be determined by the supplier. A statistically significant sample size is required.
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MIL-PRF-19500/420H * TABLE III. Delta requirements. 1/ 2/ 3/ 4/ 5/
Step
Inspection Method
MIL-STD-750 Conditions DC method
Symbol Min IR1 4/
Limits Max
Unit
1.
Reverse current leaking change
4016
100 percent of initial value or 250 nA dc, whichever is greater. 50 mV dc maximum change from previous measured value.
2.
Forward voltage change
4011
IF = 1.5 A dc; pulsed (see 4.5.1)
VF1 4/
1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table III herein, step 2. b. Subgroup 4, see table III herein, step 2. c. Subgroup 5, see table III herein, steps 1 and 2. 2/ The electrical measurements for table VIb (JAN, , JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table III herein, step 1. b. Subgroup 6, see table III herein, step 1. 3/ The electrical measurements for table VII of MIL-PRF-19500 are as follows: a. Subgroup 2, see table III herein, step 1 (JANS). b. Subgroup 6, see table III herein, step 1 and 2 (JANS), step 1 (JAN, JANTX, JANTXV and). 4/ Devices which exceed the table I limits for this test shall not be accepted. 5/ The electrical measurements for table IX of MIL-PRF-19500 are as follows: a. Subgroup 2 and 10, see table III herein, step 1 and 2.
21
MIL-PRF-19500/420H
NOTES: * L = 13T H22 on 1 inch (25.4 mm) diameter form (air core). C ~ 1 to 10 fd to give 20 s pulse width. V - Adjustable to 200 volts for power desired in DUT. D1 - 3 kV; 600 Ma (1N3647 or equivalent). D2, D3 - 600 V; 3A (1N5552 or equivalent). * Values not stated are determined at the time of test.
FIGURE 9. Typical peak reverse power measurement circuit and waveforms.
22
MIL-PRF-19500/420H
NOTE: Blocking diode shall have a forward current rating 6 A dc. FIGURE 10. Junction temperature rise test circuit.
FIGURE 11. Junction temperature test oscillogram (typical).
23
MIL-PRF-19500/420H
FIGURE 12. Expanded oscillogram of VF.
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MIL-PRF-19500/420H 5. PACKAGING * 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. * 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail vqe.chief@dla.mil. 6.4 Supersession information. Devices covered by this specification supersede the manufacturers' and users' Part or Identifying Number (PIN). This information in no way implies that the manufacturers' PIN's are suitable as a substitute for the military PIN. 6.5 Applications data. See figure 13 for maximum power in watts as a function of lead temperature at a distance "L" from the diode body. Device current capability with lead-dissipators or body forced-air-cooling, may be determined from figure 14, which shows maximum average rectified current versus lead temperature as a function of the distance L from the diode body at which lead temperature is measured.
25
MIL-PRF-19500/420H
Maximum lead temperature in C (TL) at point "L" from body (for maximum operating junction temperature of +175C with equal two-lead conditions). L RJL mm 0.00 6.35 9.53 12.70 19.05 C/W 11 16.5 22 26 35.5
Inches .000 .250 .375 .500 .750
NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 13. Maximum power in watts versus lead temperature.
26
MIL-PRF-19500/420H
NOTES 1. Dimensions are in inches. 2. Millimeters are given for general information only.
FIGURE 14. Maximum current vs lead temperature.
27
MIL-PRF-19500/420H 6.6 Suppliers of die. The qualified die suppliers with the applicable letter version (example JANHCA1N5550) will be identified on the QML. JANC ordering information Manufacturer PIN 14552 1N5550 1N5551 1N5552 1N5553 1N5554 JANHCA1N5550 JANKCA1N5550 JANHCA1N5551 JANKCA1N5551 JANHCA1N5552 JANKCA1N5552 JANHCA1N5553 JANKCA1N5553 JANHCA1N5554 JANKCA1N5554 60211 JANHCB1N5550 JANHCB1N5551 JANHCB1N5552 JANHCB1N5553 JANHCB1N5554 13409 JANHCC1N5550 JANHCC1N5551 JANHCC1N5552 JANHCC1N5553 JANHCC1N5554 33178 JANHCD1N5550 JANHCD1N5551 JANHCD1N5552 JANHCD1N5553 JANHCD1N5554 33178 JANHCE1N5550 JANHCE1N5551 JANHCE1N5552 JANHCE1N5553 JANHCE1N5554
6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue.
Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19, 71, 84, 99
Preparing activity: DLA - CC
(Project 5961-2760)
* NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at http:\\www.dodssp.daps.mil .
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